1.MQW 1310nm/1550nm FP LD 2.Built-in InGaAsP monitor PD 3.Wide temperature range operation 4.High Reliability

Absolute maximum ratings

Parameter	Symbol	Min.	Max.	Unit	Test condition
Storage temperature	Tst	-40	+100	°C	-
Operating temperature	Top	-40	+85	°C	-
Reverse voltage	VR	-	2		CW
Soldering temperature/time	-	-	260/10	°C /S	-

Optical & electrical characteristics(T=25°C)

1310nm LD Transmitter

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Center wavelength	λc	1290	1310	1330	nm	-
Threshold current	Ith	-	10	15	mA	-
Spectral width	Δλ	-	1	2	nm	CW,Ith+20mA
Output power	P	0.3	-	-	mW	APC,Ith+20mA
Operating voltage	Vop	-	1.1	1.5	V	CW,Ith+20mA
Monitor current	Im	0.1	0.7	-	mA	CW,Ith+20mA

1550nm LD Transmitter

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Center wavelength	λc	1530	1550	1570	nm	-
Threshold current	Ith	-	10	15	mA	-
Spectral width	Δλ	-	1	2	nm	CW,Ith+20mA
Output power	P	0.3	-	-	mW	APC,Ith+20mA
Operating voltage	Vop	-	1.1	1.5	V	CW,Ith+20mA
Monitor current	Im	0.1	0.7	-	mA	CW,Ith+20mA

1310&1550nm Dual_WaveLength laser diode Module