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BFU725F/N1
BFU725F/N1
Supplier Info
[China Supplier]
Contact Person : Ms. Xie Laura
Tel : 86-755-88307925
Fax : 86-755-88307925
Product Detail
BFU725F/N1 NPN wideband silicone germanium RF transistor Original NXP brand new Wholesale price Fast delivery

BFU725F/N1

General Purpose

NPN wideband silicone germanium RF transistor

Original NXP brand new Wholesale price Fast delivery 

Feature:

* Low noise high gain microwave transistor

* Noise figure (NF) = 0.7dB at 5.8GHz

* High maximum stable gain 27 dB at  1.8 GHz

* 110 GHz fT silicon germanium technology  

Applications:

* 2nd LNA stage and mixer stage in DBS LNB'S

 * Satellite radio

* Low noise amplifiers for microwave communications systems

* WLAN and CDMA applications

* Analog/digital cordless applications

* Ka band oscillators (DRO'S)

Description

NPN double polysilicon wideband transistor with buried layer for low volatage applications in a plastic, 4-pin dual-emitter SOT343F package . 

Please send me your  required part No. with quantity, I can offer you price as well!!

Welcome to send us inquiry by email ! !!

TM: coding

BFU725F/N1

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