BFU725F/N1
General Purpose
NPN wideband silicone germanium RF transistor
Original NXP brand new Wholesale price Fast delivery
Feature:
* Low noise high gain microwave transistor
* Noise figure (NF) = 0.7dB at 5.8GHz
* High maximum stable gain 27 dB at 1.8 GHz
* 110 GHz fT silicon germanium technology
Applications:
* 2nd LNA stage and mixer stage in DBS LNB'S
* Satellite radio
* Low noise amplifiers for microwave communications systems
* WLAN and CDMA applications
* Analog/digital cordless applications
* Ka band oscillators (DRO'S)
Description
NPN double polysilicon wideband transistor with buried layer for low volatage applications in a plastic, 4-pin dual-emitter SOT343F package .
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TM: coding
BFU725F/N1