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LD high power Laser Diode Electronic Components
LD high power Laser Diode Electronic Components
Supplier Info
[China Supplier]
Contact Person : Ms. LIN SERENA
Tel : 86-0573-87010278-13511286563
Fax : 86-0573-87010277
Product Detail
threshold current and operating current igh reliability DFB laser chip avelength 1310nm/1550

Specification

Electrical and optical characteristics ( Tc=+25°C, unless otherwise noted.)  

Parameter

Symbol

Min.

Typ.

Max.

Unit

Note

Threshold current

Ith

 

10

15

mA

CW, Tc=25°C

Optical output power

Pf

1.0

1.5

3.0

mW

CW, If=Ith+20mA

Slope efficiency

Se

0. 050

0.075

0.15

W/A

CW, If=Ith+20mA

Tracking Error

/pf

-1.5

 

1.5

dB

Imhold(@Pf=Ith+20mA),cw,

Peak wavelength

λc

1300

1310

1320

nm

CW, Tc=-40~+85°C

1540

1550

1560

Spectral Width

/ λ

 

 

1.0

nm

CW, Tc=-40~+85°C

Side Mode Suppression Ratio

SMSR

35

 

 

dB

CW, Tc=-40~+85°C

Spectral drift with case temperature

dλc/dTc

 

0.08

0.12

nm/°C

Tc=-40~+85°C

Monitor capacitance

Ct

 

 

20

pF

Vr=5V,f=1MHz

Monitor Respond current

Im

0.2

0.4

1

mA

CW, Vr=5V

Monitor Dark current

Id

 

 

100

nA

Vr=5V

Rise/ Fall time

Tr/Tf

 

 

0.15

ns

Ib=Ith, 20%-80%

  

  

  

Absolute Maximum Ratings

Parameter  

Symbol

Min.

Max.

Unit

Note

Storage Temperature

TS

-40

+85

°C

 

Operating Temperature

TO

-40

+85

°C

 

Forward current (LD)

Ifl

 

150

mA

 

LD high power Laser Diode Electronic Components

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