1 Structure: Silicon diffusion type mesa
2 Characteristic: ,6 gram per piece,
Entity encapsulation, bolt metal sealing, high reliability
good thermal performance3 standard: national standard of ΙΙGB4936.1-85 Q/FR55-88
4 application: widely used for rectifier circuit in all kinds of electrical appliances, electronic equipments.
model
| Reverse not Repeat peak voltage VRSM | Reverse peak voltage VRWM | Rectifier output average current IOa | Positive not repeat surge current IFSM | Work junction temperatue Tj | Store Temperature Tstg |
V | V | A | A | °C | °C | |
YZ6B | 75 | 50 | 6 | 6 | -55~150 | -55~150 |
YZ6C | 150 | 100 | ||||
YZ6D | 300 | 200 | ||||
YZ6E | 450 | 300 | ||||
YZ6F | 600 | 400 | ||||
YZ6G | 750 | 500 | ||||
YZ6H | 900 | 600 | ||||
YZ6J | 1050 | 700 | ||||
YZ6K | 1200 | 800 | ||||
Test condition | single-phase resistance load 50Hz TL≤80°C | IF= IO tP=10ms TA=25°C | ||||
a TL>80°C,lower voltage as 4.3mA/°C |
Silicon rectifier diode