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AlN ceramic used for IC package
AlN ceramic used for IC package
Supplier Info
[China Supplier]
Contact Person : Ms. lin sarah
Tel : 0086-0595-88162681
Fax : 0086-595-88162689
Product Detail
1) dense AlN ceramic substrate 2)high thermal conductivity, low dielectric loss 3)We are factory with trading department

Property Index of Aluminum Nitride substrates

Property content

Property Index

Thermal conductivity (W/m·k)

≥170

Volume resistivity(Ω·cm)

>1013

Dielectric constant [1MHz, 25°C]

9

Dielectric loss [1MHz,25°C]

3.8*10-4

Dielectric strength(KV/mm)

17

Density(g/cm3)

≥3.30

Surface roughness Ra(µm)

0.3~0.5

Thermal expansivity [20°C to 300°C](10-6/°C)

4.6

Flexural strength (MPa)

320~330

Modulus of elasticity (GPa)

310~320

Moh’s hardness

8

Water absorption(%)

0

Camber(~/25(length))

0.03~0.05

Melting point(°C)

2500

Appearance/color

Dark Gray

The laser scribing aln substrate which has high thermal conductivity of more than 170W/m.k, high 

density, low dielectric loss, good insulation and some other excellent properties. The ALN substrate  is the best choice for a wide range of industrial insulating heat sink material of high power machinery  and equipments such as high frequency equipment substrate, high power transistor module substrate, 

high density hybrid circuits, microwave power devices, power semiconductor devices, power electronic 

devices, optoelectronic components, laser-semi-conductor, LED, IC products, and so on.

Surface roughness can be reached within 0.1µm after being polished. Size tolerance can be controlled 

at around ±0.1mm by laser machine.

Different dimension and thickness are available via laser cut or customize.

AlN ceramic used for IC package

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