Product Category:IGBT Modules RoHS:No Product:IGBT Silicon Modules Configuration:Dual

Manufacturer: Infineon

 Product Category: IGBT Modules 

RoHS: No 

Product: IGBT Silicon Modules 

Configuration: Dual 

Collector- Emitter Voltage VCEO Max: 1200 V 

Collector-Emitter Saturation Voltage: 2.7 V 

Continuous Collector Current at 25 C: 1200 A

 Gate-Emitter Leakage Current: 400 nA

 Power Dissipation: 7.8 KW 

Maximum Operating Temperature: + 125 C

 Package / Case: IHM130

 Maximum Gate Emitter Voltage: +/- 20 V 

Minimum Operating Temperature: - 40 C 

Mounting Style: SMD/SMT

 Factory Pack Quantity: 8

IGBT Modules 1200V 1200A SINGLE FZ1200R12KF4