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LED
LED
Supplier Info
[China Supplier]
Contact Person : Ms. Feng Nicole
Tel : 86-574-63478977
Fax : 86-574-63472268
Product Detail
customer design High intensity and reliability meet Rohs requirement AlGaInP /GaAs Yellow Black face, White segment

 Common Anode, Dynamic drive connect

High quality, Low power requirement and low cost

      ABSOLUTE MAXIMUM RATINGS AT Ta=25:

PARAMETER

Max

UNIT

Power Dissipation Per Chip

65

mW

Peak Forward Current Per Chip

(1/10duty cycle ,1KHz)

100

mA

Average Forward Current Per Chip

25

mA

Derating Linear From 25°C Per Chip

0.27

mA/

Reverse Voltage Per Chip

5

V

Operating Temperature Range

-35°C to + 85°C

Storage Temperature Range

-35°C to + 85°C

Lead Soldering Temperature 260 at 1.6mm From Body for 3 second

 

ELECTRICAL/OPTICAL CHARACTERISTICS AT Ta=25°C:

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

Test condition

Luminous Intensity Per Segment

Iv

5

10

mcd

IF=10mA

Dominant Wavelength

l D

¾

587

¾

nm

IF=20mA

Peak Emission Wavelength

lP

¾

590

¾

nm

IF=20mA

Spectral Line Half-Width

Dl

¾

20

¾

nm

IF=20mA

Forward Voltage Per Chip

VF

¾

2.0

2.3

V

IF=20mA

Reverse Current Per Chip

IR

¾

¾

100

m  A

IF=5V

  Luminous Intensity Matching Ratio (Segment To Segment)

Iv-m

 

 

2:1

 

IF=10mA

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