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Aluminum Nitride Substrate
Aluminum Nitride Substrate
Supplier Info
[China Supplier]
Contact Person : Ms. Chen Hua
Tel : 86-592-2960197
Fax :
Product Detail
Aluminum Nitride Substrate(AlN) is widely used in the fields of military and space technology, computer,

Aluminum Nitride Substrate(AlN) is widely used in the fields of military and space         technology, computer, instruments and meters, power electronic,automobile, homeappliances, OA, etc.·High-power light emitting diode (LED) package template·Power transistor module board·High-frequency device board·Radiating/insulating plate for thyristor·Mount board for semiconductor laser and light emission diode·Hybrid module,ignition module·IC package·Thermal-module board·Opto-electronics·Dielectric layers in optical storage media·Electronic substrates, chip carriers where high thermal conductivity is essential·Military applications·As a crucible to grow crystals of gallium arsenide·Steel and semiconductor manufacturingAluminum Nitride Ceramic have high thermal conductivity,high electric insulation,low coefficient of thermal expansion and low dielectric constant characteristics. Aluminum Nitride ceramic products are widely used in Microelectronics,Optical Electronics,Electronic-power Electronics ,Power Electronics. All kinds of aluminum nitride substrates,metallized aluminum nitride substrates and aluminum nitride packages can be produced. Aluminum Nitride microwave power device have good heat dissipation, high microwave power and good microwave properties.Now Aluminum Nitride already used as microwave power attenuators, microwave power resistors and microwave power terminals.Aluminum Nitride Microwave Power Device Aluminum Nitride thin film metallized substrates have high adhesion strength of metallization and high wiring density and can realize high accurate metallized wiring.It can used as high power heat sink and microcircuits.Aluminum Nitride Metallized Substrates Aluminum nitride substrates have high thermal conductivity, high electric insulation, and low Thermal expansion, low dielectric constant. Thermal conductivity is about ten times as high as that of alumina substrates.Thermal expansion is similar to that of silicon. It is ideal to replace toxic Berylia (BeO).

Aluminum Nitride Substrate

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