high thermal conductivity, high electric insulation, and low thermal expansion, low dielectric constant

Thermal conductivity	Substrate thickness	Surface roughness	Surface roughness	Metallization(thin film)	Metallization(thick film)
170w/m·k	0.3-3.00mm	0.6um(lapped)	0.03um(polished)	Ti/Pt/Au,NiCrAu etc	Ag/Pd,Au,W/Ni/Au ect

Aluminum nitride substrates have high thermal conductivity, high electric insulation, and low thermal expansion, low dielectric constant. Thermal conductivity is about ten times as high as that of alumina substrates. Thermal expansion is similar tothat of silicon. It is ideal to replace toxic Berylia (BeO).

Aluminum Nitride Substrates