1:GE craft 2:Product parameters good consistency 3:On-state power consumption is small

1:  GE process standards, product positioning semiconductor chip high-end market.

2:  Product parameters good consistency. Export products and domestic product orders and all required delivery. No screening  .

3: On-state power consumption is small, with excellent thermal fatigue characteristics.

Wafer Diameter±0.1	Control polar diameter	Cathode internal diameter	Cathode outer diameter	VDRM/VRRM	TVJM
mm	mm	mm	mm	mm	°c
25.4	2.7	5.2	20.5	100-6500V	125
30	2.7	5.2	25	100-6500V	125
30.48	2.7	5.2	25	100-6500V	125
35	3.4	6.2	29	100-6500V	125
38.1	3.4	6.2	31	100-6500V	125
40	3.4	6.2	33	100-6500V	125
50	3.4	8.8	43.8	100-6500V	125
55	3.4	8.8	47	100-6500V	125
63.5	6.2	10	55	100-6500V	125
76	6.2	10	67	100-6500V	125
85	6.2	10	76	100-6500V	125
99	6.2	11	88	400-6500V	125

                                                               

GE craft high voltage thyristor chip in abundant supply(KP4"-4200V)