SGG150-12CS2 IGBT IGBT modules SPT: Soft-punch-through technology VCE(SAT) with positive temperature coefficient

SGG150-12CS2IGBT

IGBT modules

Parameter name

symbol

unit

values

conditions

IGBT

Collector-emitter voltage

VCES

V

1200

DC-collector current

IC

A

200 (150)

TC=25(80)

Repetitive peak current

ICRM

A

400 (300)

TC=25(80), tp=1ms

Gate-emitter peak voltage

VGES

V

±20

Operation temperature

Top

-40~+125

Storage temperature

Tstg

-40~+125

Insulation test voltage

VISOL

V

2500

RMS, 1min, 50Hz

Inverse diode

DC-forward current

IF

A

200 (150)

TC=25(80)

Repetitive peak forward voltage

IFRM

A

400 (300)

TC=25(80), tp=1ms

Forward surge current

IFSM

A

1400

tp=10ms, sin, Tj=125

SGG150-12CS2IGBT