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Mo Wire is key parts for Monocrystalline Silicon growing furnace application,100% high strength&high thermal stability
Mo Wire is key parts for Monocrystalline Silicon growing furnace application,100% high strength&high thermal stability
Supplier Info
[China Supplier]
Contact Person : Mr. Deng William
Tel : 86-21-51619229
Fax : 86-21-60911306
Product Detail
Mo Wire is a key part for Monocrystalline Silicon growing furnace application, it has higher creep resistance,thermal stability

Mo Wire is a key part for Monocrystalline Silicon growing furnace application, it has higher creep resistance,thermal stability  and better ductility after high-temperature use.

 

Applications

Mo has a unique property of which it's melting point can reach 2610 degree C. Mo Wire is widely applied in high temperature vacuum furnace melting environment such as sapphire growing furnace, quartz glass melting furnace, and Monocrystalline Silicon growing furnace based on it’s higher creep resistance, thermal stability and better ductility after high-temperature use. The working temperature of  Mo wire is above 1500 degree C. For Monocrystalline Silicon growing furnace, high-purity, high-density, higher thermal stability with other features of exact measurement and smooth surface has decisive influence on the success of crystal growth, quality control of pulling crystal, discharging and service life during sapphire growing process.

 

Crystal growth is a major stage of a crystallization process, which typically follows an initial stage of either homogeneous or heterogeneous (surface catalyzed) nucleation.

Crystal growth is a significant step for the semiconductor industry as well as for optical applications and solar industries. Sapphire single crystals are used for high power laser optics, high pressure components and substrates for LEDs. Aluminum Nitride(AlN) single crystals are the principal components for fabricating UV-LEDs and laser diodes (LDs).

We can produce many varieties of tungsten and molybdenum crucibles for single crystal growing process as a high temperature durability container in this application with its best properties.

      W crucibles       Mo crucibles       Customized crucibles         Lids        Dies      Heating shields

 

1. Physical and chemical properties

(1) Density: 10.2(2) Surface roughness: < 1.6

(3) Purity:W99.97%(min.)

(4) Application temperature environment:1500~1800

 

2. Specifications: 

1)Dimensions and tolerances Unit:mm 

Type

(Mo%)

  [m / kg]Approx Length/weight

      (g/cm3) 

Notes

Mo-1 

>= 99.97

31.2 m/ kg --(Dia2mm)

87 m /kg  --(Dia1.2mm)

>=10.2

Temp:1000~12000C

MoA-1

>= 99.95

Temp:1200~18000C;

Special sizes can be manufactured based on customers' requirements

 

Dia (μm)

200mm length tolerance(%)

Dia tolerance(%)

I

II

I

II

20<d≤30

±2.5

±3

 

 

30<d≤40

±2.0

±3

--

--

40<d≤100

±1.5

±3

--

--

100<d≤400

±1.5

±3

--

--

400<d≤600

--

--

±1.5

±2.5

600<d≤2500

--

--

±1.0

±2.0

Mo Wire is key parts for Monocrystalline Silicon growing furnace application,100% high strength&high thermal stability

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