N-type solar grade mono silicon wafer
Item | N-type solar wafer(125x125mm) | N-type solar wafer(156x156mm) |
Growth Method | CZ | CZ |
Conductive Type | N-type | N-type |
Dopant | Phos. | Phos. |
Orientation | <100>±3° | <100>±3° |
Resistivity | 1-3 ,3-6Ω•cm | 1-3,3-6 Ω•cm |
Bulk Lifetime | ≥1000μs | ≥1000μs |
Oxygen Content | ≤0.1*1018 cm3 | ≤0.1*1018 cm3 |
Carbon Content | ≤0.1*1017 /cm3 | ≤0.1*1017 /cm3 |
Dimension | 125*125±0.5mm | 156*156±0.5mm |
Diagonal | 150±0.5mm | 200±0.5mm |
Square Sides Angle | 90±0.3° | 90±0.3° |
Thickness | 200±20 μm | 200±20 μm |
TTV | ≤25μm | ≤25μm |
Saw Mark | ≤15μm | ≤15μm |
Warp | ≤40μm | ≤40μm |
Chips | Depth<0.3mm;Length<0.5mmless than 2chips per wafer | Depth<0.3mm;Length<0.5mm,less than 2chips per wafer |
Appearance | No Stain, No Pinhole and Cracks byVisual Inspection | No Stain, No Pinhole and Cracks byVisual Inspection |
Dislocation Density | ≤1000 pcs/cm2 | ≤1000 pcs/cm2 |
N-type solar grade mono silicon wafer