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Mono crystal Silicon Wafer(Pseudo square)Growth Method: CZDimension: 125x125±0.5mmDiagonal: 150±0.5mmSquare Angle: 90±0.3 degreeOrientation: 100±3 degreeType of conductivity: P typeDopant: BoronResitivity: 0.5-3 , 3-6 Ohm/cmContent of Oxygen: 1x10 At/cm3Content of Carbon: 5x 10 At/cm3Life Time: ≥10 usSurface Finish: As cut and cleanedbackside: As cut and cleanedBow, max: <50 μmSaw marks depth:<30 μmThickness: 200±20TTV: <50 μmSurface: Without pin holes, cracks, stains and other contaminationEdge chips: 1 pcs not longer than 1 mm, not deeper than 0.5 mm
125X125 mm mono crystalline solar cell silicon wafer