Ads by Google
SILICON NITRIDE BONDED SILICON CARBIDE PLATE
Physical items | Value |
Apparent porosity % | ≤18 |
Bulk density g/cm3 | ≥2.60 |
Cold compression strength Mpa | ≥140 |
Modulus rapture at room temperature 1400°C Mpa | ≥40 |
Modulus rapture at elevated temperature 1400°C Mpa | ≥40 |
Coefficient of thermal liner expansion x 10-6/°C 1100°C | ≤4.18 |
Thermal Conductivity w/(m·k) 350°C | ≥16 |
Refractoriness °C | 1800 |
0.2Mpa loading softening point °C | 1600 |
Max working temperature °C | 1550 |
Composition % | SiC ≥70 |
Si3N4 ≥20 | |
Fe2O3 ≤0.7 | |
SiC + Si3N4 ≥90 | |
Si ≤0.5 |
silicon nitride bonded silicon carbide plate