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IC grade mono silicon ingots
Mono Silicon Ingot | |
Size | 2"/3"/4"/5"/6"/ |
Growth method | FZ |
Diameter | 50.8±0.3mm/76.2±0.3mm /100±0.4mm/ 125±0.5mm/ 150±0.5mm |
Orientation | <111> <100> |
Type | N,P |
Purity | 11N(99.999999999%) |
Oxygen Content | ≤20-36ppma |
Carborn Content | ≤1ppma |
Resistivity Range | <10000Ω·cm |
The other | None |
Min. Order Quantity | 10kg |
Price | According to your specification especially Resistivity. |
Semiconductor Ingot