DRT series IGBT drive series transformer is our new product designed for drive IGBT and MOSFET, using New material as core mater

Parameter Definitions, diagrams of Layout/Installation/Coil, Typical Specifications:

    1 Parameter Definitions:

    u-Tum ratio=1:2:3

    Vp-dielectric strength between coil windings with 60s test duration.

    ∫udt-Math product of volt-microsecond≈V1·tn(the value can keep unchanged in some frequency range).

    V1-Input signal voltage (primary pulse voltage).

    tn-Rated pulse width of the drive transformer, under related V1 and Fp.

    V2-Output signal voltage (secondary pulse voltage). 

    RL-IGBT module or MOSFET equivalent resistance of control section.

    Lp-Inductance of primary, f=1000Hz, V=0.3V.

    Ls-Leakage inductance(measured when secondary shorted) f=1000Hz, V=1V.

    Ck-Coupling capacity, f=1000Hz, V=1V.

Model	Ratio u	Vp (kV)	Primary Induction LP	Leakage Induction LS	Coupling Capacity CK	∫udt (μVS)	V1 (V)	tn (μS)	V2 (V)	RL (Ω)	Frequency
DRT801/111B	1:1:1	3.1	8mH	8μH	29pF	≥280	15	19	13	100	100Hz~50 kHz

 

IGBT driver transformers