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hf power transistor BU406
hf power transistor BU406
Supplier Info
[China Supplier]
Contact Person : Ms. Lin Emily
Tel : 86-510- 82932090
Fax : 86-510-82932017
Product Detail
reliable manufacturer ISO9001-2008, UL, CTI(as eaqual to ROHS) good quality low price fast delivery
ABSOLUTE MAXIMUM RATINGS:   
SymbolParameterValueUnit 
VCBOcollector-base voltage(IE=0)400VMIN
VCEOcollector-emitter voltage(IB=0)200VMIN
VEBOemitter-base voltage(IC=0)6VMIN
ICcollector current10AMAX
Ptottotal dissipation at TC≤25120WMIN
Tjoperating junction temperature120CMAX
Tstgstorage temperature-55~150C 

 semiconductor

ELECTRICAL CHARCTERISTICS  Tamb=25   
symbolparametertest conditionminmaxunit
ICBOcollector-base current(IE=0)VCB=100V 0.1mA
IEBOemitter cut-off current(IC=0)VEB=5V 0.1mA
HFE VCE=5V, IC=2A60100 
fTtransition-frequencyVCE=10V, IC=0.5mA, F=1MHZ3 MHZ
VCE(sat)collector-emitter saturation voltageIC=4A, IB=0.4A 1.2V
VBE(sat)base-emitter saturation voltageIC=4A, IB=0.4A 2V

hf power transistor BU406

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