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1 The product structure: silicon NPN extension flat type, metal hermetic sealing
2 Characteristics:
23 gram per piece Short opened or cut-off time high output current3 standard: national standard of ΙΙ GJB33A-97 Q/FR20115-2002(3DK456)Q/FR20121-2002(3DK456E)
4 application: widely used in switch circuit, amplifier circuit, etc.
Para name | symbols | 3DK456 | 3DK456E | unit |
collector-base voltage (IE=0) | VCBO | 1000 | 600 | V |
collector-emitter voltage (IB=0) | VCEO | 600 | 500 | V |
Emitter-base voltage (IC=0) | VEBO | 13 | 8 | V |
collector DC current | IC | 40 | 20 | A |
Total dissipation power TC≤25°C TC=75°C TC>25°C Lower voltage |
Ptot |
300 200 2 |
350 233 2.3 |
W
W/°C |
Working temperature | Tj | 175 | 200 | °C |
Store temperature | Tstg | -55~175 | -65~200 | °C |
outline dimension
Silicon bipolar NPN power switching transistor 3DK4563DK456