1.MQW 1625nm DFB LD 2.Built-in InGaAsP monitor PD 3.Wide temperature range operation 4.High Reliability

Absolute maximum ratings

Parameter	Symbol	Min.	Max.	Unit	Test condition
Storage temperature	Tst	-40	+100	°C	-
Operating temperature	Top	-40	+85	°C	-
Reverse voltage	VR	-	2	V	CW
Soldering temperature/time	-	-	260/10	°C /S	-

Optical & electrical characteristics(T=25°C)

1310nm LD Transmitter

Parameter	Symbol	Min.	Typ.	Max.	Unit	Test condition
Center wavelength	λc	1620	1625	1630	nm	-
Threshold current	Ith	-	10	15	mA	-
Side mode suppression ratio	SMSR	30	40	-	dB	-
Spectral width	Δλ	-	1	2	nm	CW,Ith+20mA
Output power	P	1	-	-	mW	APC,Ith+20mA
Operating voltage	Vop	-	1.2	1.5	V	CW,Ith+20mA
Rise/ Fall time	Tr/Tf	-	0.3	0.7	ns	10%~90%,Ib=Ith
Monitor current	Im	0.05	-	-	mA	CW,Ith+20mA
Optical Isolation*	Iso	30	-	-	dB	Single stage
Optical Isolation*	Iso	50	-	-	dB	Dual stage

 Note:*temperature range:-20~70°C

1625nm DFB Laserdiode Module